| Part Number | IPB065N06L G |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPB009N03L G | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7 | Details |
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IPB009N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7 | Details |
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IPB011N04L G | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
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IPB011N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
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IPB011N04NGATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
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IPB014N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 34A TO263-7 | Details |
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IPB015N04L G | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
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IPB015N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
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IPB015N04N G | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
