| Part Number | IPB030N08N3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPB030N08N3 G | Infineon Technologies | MOSFET N-CH 80V 160A TO263-7 | Details |
|
IPB030N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 160A TO263-7 | Details |
 |
IPB031N08N5ATMA1 | Infineon Technologies | MOSFET N-CH 80V TO263-3 | Details |
|
IPB031NE7N3GATMA1 | Infineon Technologies | MOSFET N-CH 75V 100A TO263-3 | Details |
 |
IPB032N10N5ATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | Details |
|
IPB033N10N5LFATMA1 | Infineon Technologies | MOSFET N-CH 100V D2PAK-3 | Details |
|
IPB034N03L G | Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 | Details |
 |
IPB034N03LG | I | IPB034N03LG I TO263 New Original Stocks | Details |
|
IPB034N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 | Details |
|
IPB034N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO263-3 | Details |
