IPB016N06L3GATMA1 - Infineon Technologies

Part Number	IPB016N06L3GATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs	166nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 30V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IPB016N06L3 G	Infineon Technologies	MOSFET N-CH 60V 180A TO263-7	Details
	IPB016N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 180A TO263-7	Details