FD1000R17IE4DB2BOSA1

FD1000R17IE4DB2BOSA1 - Infineon Technologies

Part Number
FD1000R17IE4DB2BOSA1
Manufacturer
Infineon Technologies
Brief Description
MODULE IGBT PRIME3-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FD1000R17IE4DB2BOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
247 pcs
Reference Price
USD 660.305/pcs
Our Price
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FD1000R17IE4DB2BOSA1 Detailed Description

Part Number FD1000R17IE4DB2BOSA1
Part Status Active
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 1390A
Power - Max 6250W
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 81nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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