DF11MR12W1M1B11BOMA1 Detailed Description
| Part Number |
DF11MR12W1M1B11BOMA1 |
| Part Status |
Obsolete |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
50A |
| Rds On (Max) @ Id, Vgs |
23 mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id |
5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs |
125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
3950pF @ 800V |
| Power - Max |
20mW |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
Module |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR DF11MR12W1M1B11BOMA1
