BSZ018NE2LSIATMA1 - Infineon Technologies

Part Number	BSZ018NE2LSIATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 12V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BSZ018NE2LS	Infineon Technologies	MOSFET N-CH 25V 23A TSDSON-8	Details
BSZ018NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 23A TSDSON-8	Details
BSZ018NE2LSI	Infineon Technologies	MOSFET N-CH 25V 22A TSDSON-8	Details
BSZ018NE2LSIATMA1	Infineon Technologies	MOSFET N-CH 25V 22A TSDSON-8	Details