BSP613P

BSP613P - Infineon Technologies

Part Number
BSP613P
Manufacturer
Infineon Technologies
Brief Description
MOSFET P-CH 60V 2.9A SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSP613P PDF online browsing
Datasheet PDF Download
BSP613P.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3771 pcs
Reference Price
USD 0/pcs
Our Price
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BSP613P Detailed Description

Part Number BSP613P
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 2.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Weight -
Country of Origin -

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