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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › BSM100GB120DN2HOSA1
BSM100GB120DN2HOSA1

BSM100GB120DN2HOSA1 - Infineon Technologies

Part Number
BSM100GB120DN2HOSA1
Manufacturer
Infineon Technologies
Brief Description
IGBT 2 MED POWER 62MM-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSM100GB120DN2HOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
1165 pcs
Reference Price
USD 141.08/pcs
Our Price
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BSM100GB120DN2HOSA1 Detailed Description

Part Number BSM100GB120DN2HOSA1
Part Status Not For New Designs
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Power - Max 800W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Current - Collector Cutoff (Max) 2mA
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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