BSC750N10ND G

BSC750N10ND G - Infineon Technologies

Part Number
BSC750N10ND G
Manufacturer
Infineon Technologies
Brief Description
MOSFET 2N-CH 100V 3.2A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSC750N10ND G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
46866 pcs
Reference Price
USD 0.5529/pcs
Our Price
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BSC750N10ND G Detailed Description

Part Number BSC750N10ND G
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 75 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V
Power - Max 26W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8
Weight -
Country of Origin -

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