BSC22DN20NS3 G - Infineon Technologies

Part Number	BSC22DN20NS3 G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Rds On (Max) @ Id, Vgs	225 mOhm @ 3.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BSC220N20NSFDATMA1	Infineon Technologies	TRENCH 100V	Details
BSC22DN20NS3 G	Infineon Technologies	MOSFET N-CH 200V 7A 8TDSON	Details
BSC22DN20NS3GATMA1	Infineon Technologies	MOSFET N-CH 200V 7A 8TDSON	Details
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