BSC160N10NS3GATMA1 Detailed Description
Part Number |
BSC160N10NS3GATMA1 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
8.8A (Ta), 42A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 33µA |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 50V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
60W (Tc) |
Rds On (Max) @ Id, Vgs |
16 mOhm @ 33A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TDSON-8 |
Package / Case |
8-PowerTDFN |
Weight |
- |
Country of Origin |
- |
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