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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › BCR108E6433HTMA1
BCR108E6433HTMA1

BCR108E6433HTMA1 - Infineon Technologies

Part Number
BCR108E6433HTMA1
Manufacturer
Infineon Technologies
Brief Description
TRANS PREBIAS NPN 200MW SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BCR108E6433HTMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
1030278 pcs
Reference Price
USD 0.0251/pcs
Our Price
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BCR108E6433HTMA1 Detailed Description

Part Number BCR108E6433HTMA1
Part Status Last Time Buy
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 170MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3
Weight -
Country of Origin -

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