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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › GP1M009A060H
GP1M009A060H

GP1M009A060H - Global Power Technologies Group

Part Number
GP1M009A060H
Manufacturer
Global Power Technologies Group
Brief Description
MOSFET N-CH 600V 9A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GP1M009A060H PDF online browsing
Datasheet PDF Download
GP1M009A060H.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4231 pcs
Reference Price
USD 0/pcs
Our Price
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GP1M009A060H Detailed Description

Part Number GP1M009A060H
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Rds On (Max) @ Id, Vgs 1 Ohm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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