| Part Number | GP1M009A060H |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 4.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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GP1M003A040CG | Global Power Technologies Group | MOSFET N-CH 400V 2A DPAK | Details |
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GP1M003A040PG | Global Power Technologies Group | MOSFET N-CH 400V 2A IPAK | Details |
|
GP1M003A050CG | Global Power Technologies Group | MOSFET N-CH 500V 2.5A DPAK | Details |
 |
GP1M003A050FG | Global Power Technologies Group | MOSFET N-CH 500V 2.5A TO220F | Details |
|
GP1M003A050HG | Global Power Technologies Group | MOSFET N-CH 500V 2.5A TO220 | Details |
|
GP1M003A050PG | Global Power Technologies Group | MOSFET N-CH 500V 2.5A IPAK | Details |
|
GP1M003A080CH | Global Power Technologies Group | MOSFET N-CH 800V 3A DPAK | Details |
|
GP1M003A080FH | Global Power Technologies Group | MOSFET N-CH 800V 3A TO220F | Details |
|
GP1M003A080H | Global Power Technologies Group | MOSFET N-CH 800V 3A TO220 | Details |
|
GP1M003A080PH | Global Power Technologies Group | MOSFET N-CH 800V 3A IPAK | Details |
