| Part Number | GD5F1GQ4UEYIGY |
|---|---|
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Clock Frequency | 120MHz |
| Write Cycle Time - Word, Page | 700µs |
| Access Time | - |
| Memory Interface | SPI - Quad I/O |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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GD5F1GQ4RF9IGR | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
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GD5F1GQ4RF9IGY | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
|
GD5F1GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
|
GD5F1GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
|
GD5F1GQ4UFYIGR | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
|
GD5F1GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited | SPI NAND FLASH | Details |
