| Part Number | MURTA40060 |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 200A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 25µA @ 600V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MURT10005 | GeneSiC Semiconductor | DIODE MODULE 50V 100A 3TOWER | Details |
|
MURT10005R | GeneSiC Semiconductor | DIODE MODULE 50V 100A 3TOWER | Details |
|
MURT10010 | GeneSiC Semiconductor | DIODE MODULE 100V 100A 3TOWER | Details |
|
MURT10010R | GeneSiC Semiconductor | DIODE MODULE 100V 100A 3TOWER | Details |
|
MURT10020 | GeneSiC Semiconductor | DIODE ARRAY GP 200V 100A 3TOWER | Details |
|
MURT10020R | GeneSiC Semiconductor | DIODE ARRAY GP REV POLAR 3TOWER | Details |
|
MURT10040 | GeneSiC Semiconductor | DIODE ARRAY GP 400V 100A 3TOWER | Details |
|
MURT10040R | GeneSiC Semiconductor | DIODE ARRAY GP REV POLAR3TOWER | Details |
|
MURT10060 | GeneSiC Semiconductor | DIODE ARRAY GP 600V 100A 3TOWER | Details |
|
MURT10060R | GeneSiC Semiconductor | DIODE ARRAY GP REV POLAR 3TOWER | Details |
