MURT10020R - GeneSiC Semiconductor

Part Number	MURT10020R
Part Status	Active
Diode Configuration	-
Diode Type	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	100A (DC)
Voltage - Forward (Vf) (Max) @ If	1.3V @ 50A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75ns
Current - Reverse Leakage @ Vr	25µA @ 50V
Operating Temperature - Junction	-40°C ~ 175°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MURT10005	GeneSiC Semiconductor	DIODE MODULE 50V 100A 3TOWER	Details
MURT10005R	GeneSiC Semiconductor	DIODE MODULE 50V 100A 3TOWER	Details
MURT10010	GeneSiC Semiconductor	DIODE MODULE 100V 100A 3TOWER	Details
MURT10010R	GeneSiC Semiconductor	DIODE MODULE 100V 100A 3TOWER	Details
MURT10020	GeneSiC Semiconductor	DIODE ARRAY GP 200V 100A 3TOWER	Details
MURT10020R	GeneSiC Semiconductor	DIODE ARRAY GP REV POLAR 3TOWER	Details
MURT10040	GeneSiC Semiconductor	DIODE ARRAY GP 400V 100A 3TOWER	Details
MURT10040R	GeneSiC Semiconductor	DIODE ARRAY GP REV POLAR3TOWER	Details
MURT10060	GeneSiC Semiconductor	DIODE ARRAY GP 600V 100A 3TOWER	Details
MURT10060R	GeneSiC Semiconductor	DIODE ARRAY GP REV POLAR 3TOWER	Details