MBR400100CT - GeneSiC Semiconductor

Part Number	MBR400100CT
Part Status	Active
Diode Configuration	1 Pair Common Cathode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io) (per Diode)	400A (DC)
Voltage - Forward (Vf) (Max) @ If	840mV @ 200A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	5mA @ 20V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Supplier Device Package	Twin Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBR400100	MCC	400 Amp Rectifier 20 to 100 Volts Schottky Barrier	Details
MBR400100CT	GeneSiC Semiconductor	DIODE MODULE 100V 400A 2TOWER	Details
MBR400100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 400A 2TOWER	Details
MBR400150CT	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 200A 2 TOWER	Details
MBR400150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 200A 2 TOWER	Details
MBR400200CT	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 200A 2 TOWER	Details
MBR400200CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 200A 2 TOWER	Details
MBR40020CT	GeneSiC Semiconductor	DIODE MODULE 20V 400A 2TOWER	Details
MBR40020CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 200A 2 TOWER	Details
MBR40020CTR	GeneSiC Semiconductor	DIODE MODULE 20V 400A 2TOWER	Details