MBR30035CTR - GeneSiC Semiconductor

Part Number	MBR30035CTR
Part Status	Active
Diode Configuration	1 Pair Common Anode
Diode Type	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	35V
Current - Average Rectified (Io) (per Diode)	300A
Voltage - Forward (Vf) (Max) @ If	700mV @ 150A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1mA @ 35V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Supplier Device Package	Twin Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBR300100CT	GeneSiC Semiconductor	DIODE MODULE 100V 300A 2TOWER	Details
MBR300100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 300A 2TOWER	Details
MBR300150CT	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 150A 2 TOWER	Details
MBR300150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 150A 2 TOWER	Details
MBR30020	MCC	300 Amp Rectifier 20 to 45V olts Schottky Barrier	Details
MBR300200CT	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 150A 2 TOWER	Details
MBR300200CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 150A 2 TOWER	Details
MBR30020CT	GeneSiC Semiconductor	DIODE MODULE 20V 300A 2TOWER	Details
MBR30020CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 150A 2 TOWER	Details
MBR30020CTR	GeneSiC Semiconductor	DIODE MODULE 20V 300A 2TOWER	Details