GAP3SLT33-214 - GeneSiC Semiconductor

Part Number	GAP3SLT33-214
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	3300V
Current - Average Rectified (Io)	300mA (DC)
Voltage - Forward (Vf) (Max) @ If	2.2V @ 300mA
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	10µA @ 3300V
Capacitance @ Vr, F	42pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Supplier Device Package	DO-214AA
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	GAP3SLT33-214	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA DO214	Details
	GAP3SLT33-220FP	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA TO220	Details