IRLW610ATM

IRLW610ATM - Fairchild/ON Semiconductor

Part Number
IRLW610ATM
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 200V 3.3A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRLW610ATM PDF online browsing
Datasheet PDF Download
IRLW610ATM.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4222 pcs
Reference Price
USD 0/pcs
Our Price
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IRLW610ATM Detailed Description

Part Number IRLW610ATM
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.65A, 5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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