FQI10N20CTU - Fairchild/ON Semiconductor

Part Number	FQI10N20CTU
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Rds On (Max) @ Id, Vgs	360 mOhm @ 4.75A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQI10N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9.5A I2PAK	Details
FQI10N60C	FSC	FQI10N60C FSC TO-262 New Original Stocks	Details
FQI10N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 9.5A I2PAK	Details
FQI11N40TU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 11.4A I2PAK	Details
FQI11P06TU	Fairchild/ON Semiconductor	MOSFET P-CH 60V 11.4A I2PAK	Details
FQI12N50TU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 12.1A I2PAK	Details
FQI12N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 12A I2PAK	Details
FQI12N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.5A I2PAK	Details
FQI13N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13.6A I2PAK	Details
FQI13N06TU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13A I2PAK	Details