FQD6N50CTM - Fairchild/ON Semiconductor

Part Number	FQD6N50CTM
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.25A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQD60N03	FSC	FQD60N03 FSC TO252 New Original Stocks	Details
FQD60N03L	FAIRCHILD	FQD60N03L FAIRCHILD TO-252 New Original Stocks	Details
FQD630	FAIRC	FQD630 FAIRC TO-252.. New Original Stocks	Details
FQD630TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7A DPAK	Details
FQD630TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7A DPAK	Details
FQD6N25	FAIRC	FQD6N25 FAIRC TO-252.. New Original Stocks	Details
FQD6N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK	Details
FQD6N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK	Details
FQD6N40CTF	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A DPAK	Details
FQD6N40CTM	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A DPAK	Details