FQD30N06TF_F080 - Fairchild/ON Semiconductor

Part Number	FQD30N06TF_F080
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	22.7A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	945pF @ 25V
Vgs (Max)	±25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs	45 mOhm @ 11.4A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQD30N06	FAIRC	FQD30N06 FAIRC TO-252.. New Original Stocks	Details
FQD30N06L	FAIRC	FQD30N06L FAIRC TO-252.. New Original Stocks	Details
FQD30N06LTF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 24A DPAK	Details
FQD30N06LTM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 24A DPAK	Details
FQD30N06TF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.7A DPAK	Details
FQD30N06TF_F080	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.7A DPAK	Details
FQD30N06TM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.7A DPAK-3	Details
FQD30N60LTF	FAICHLD	FQD30N60LTF FAICHLD TO-252 New Original Stocks	Details