FCH023N65S3_F155 - Fairchild/ON Semiconductor

Part Number	FCH023N65S3_F155
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs	222nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7160pF @ 400V
Vgs (Max)	±30V
FET Feature	Super Junction
Power Dissipation (Max)	595W (Tc)
Rds On (Max) @ Id, Vgs	23 mOhm @ 37.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 Long Leads
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FCH023N65S3-F155	ON Semiconductor	MOSFET N-CH 650V 75A TO247	Details
FCH023N65S3L4	Fairchild/ON Semiconductor	MOSFET N-CH 650V 75A TO247	Details
FCH023N65S3_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 75A TO247	Details