ZXMN6A08E6QTA - Diodes Incorporated

Part Number	ZXMN6A08E6QTA
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	459pF @ 40V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Rds On (Max) @ Id, Vgs	80 mOhm @ 4.8A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-26
Package / Case	SOT-23-6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ZXMN60A11D	ZETEX	ZXMN60A11D ZETEX SO-8 New Original Stocks	Details
ZXMN6A07FQTA	Diodes Incorporated	MOSFET BVDSS 41V-60V SOT23	Details
ZXMN6A07FTA	Diodes Incorporated	MOSFET N-CH 60V 1.2A SOT23-3	Details
ZXMN6A07FTC	Diodes Incorporated	MOSFET N-CH 60V 1.2A SOT23-3	Details
ZXMN6A07ZTA	Diodes Incorporated	MOSFET N-CH 60V 1.9A SOT-89	Details
ZXMN6A08E6	DIODES	ZXMN6A08E6 DIODES TSOP-6 New Original Stocks	Details
ZXMN6A08E6QTA	Diodes Incorporated	MOSFET N-CH 60V 2.8A SOT23-6	Details
ZXMN6A08E6TA	Diodes Incorporated	MOSFET N-CH 60V 2.8A SOT23-6	Details
ZXMN6A08E6TC	Diodes Incorporated	MOSFET N-CH 60V 2.8A SOT23-6	Details
ZXMN6A08GQTA	Diodes Incorporated	MOSFET N-CH 60VSOT223	Details