ZXMN3A04DN8TA - Diodes Incorporated

Part Number	ZXMN3A04DN8TA
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.5A
Rds On (Max) @ Id, Vgs	20 mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	36.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 15V
Power - Max	1.81W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ZXMN3A01E6	DIODES	ZXMN3A01E6 DIODES TSOP-6 New Original Stocks	Details
ZXMN3A01E6TA	Diodes Incorporated	MOSFET N-CH 30V 2.4A SOT-23-6	Details
ZXMN3A01E6TC	Diodes Incorporated	MOSFET N-CH 30V 2.4A SOT23-6	Details
ZXMN3A01FTA	Diodes Incorporated	MOSFET N-CH 30V 1.8A SOT23-3	Details
ZXMN3A01FTC	Diodes Incorporated	MOSFET N-CH 30V 1.8A SOT23-3	Details
ZXMN3A01ZTA	Diodes Incorporated	MOSFET N-CH 30V 3.3A SOT89	Details
ZXMN3A02N8TA	Diodes Incorporated	MOSFET N-CH 30V 5.3A 8-SOIC	Details
ZXMN3A02N8TC	Diodes Incorporated	MOSFET N-CH 30V 8SOIC	Details
ZXMN3A02X8TA	Diodes Incorporated	MOSFET N-CH 30V 5.3A 8-MSOP	Details
ZXMN3A02X8TC	Diodes Incorporated	MOSFET N-CH 30V 5.3A 8MSOP	Details