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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays › MMDT4126-7-F
MMDT4126-7-F

MMDT4126-7-F - Diodes Incorporated

Part Number
MMDT4126-7-F
Manufacturer
Diodes Incorporated
Brief Description
TRANS 2PNP 25V 0.2A SOT363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MMDT4126-7-F PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
7500 pcs
Reference Price
USD 0.066/pcs
Our Price
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MMDT4126-7-F Detailed Description

Part Number MMDT4126-7-F
Part Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 25V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 1V
Power - Max 200mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Weight -
Country of Origin -

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