DMN2990UFZ-7B - Diodes Incorporated

Part Number	DMN2990UFZ-7B
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.2V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	55.2pF @ 16V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	320mW (Ta)
Rds On (Max) @ Id, Vgs	990 mOhm @ 100mA, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN0606-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN2990UDJ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.45A SOT-963	Details
DMN2990UDJQ-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT963	Details
DMN2990UFA-7B	Diodes Incorporated	MOSFET N-CH 20V 0.51A	Details
DMN2990UFB-7B	Diodes Incorporated	MOSFET BVDSS 8V-24V X1-DFN1006-	Details
DMN2990UFO-7B	Diodes Incorporated	MOSFET N-CH 20V 750MA X2DFN0604	Details
DMN2990UFZ-7B	Diodes Incorporated	MOSFET N-CH 20V .25A X2-DFN0606	Details