DMN25D0UFA-7B - Diodes Incorporated

Part Number	DMN25D0UFA-7B
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	240mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.7V, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	27.9pF @ 10V
Vgs (Max)	8V
FET Feature	-
Power Dissipation (Max)	280mW (Ta)
Rds On (Max) @ Id, Vgs	4 Ohm @ 400mA, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN0806-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN2500UFB4-7	Diodes Incorporated	MOSFET N-CH 20V 0.81A 3DFN	Details
DMN2501UFB4-7	Diodes Incorporated	MOSFET N-CH 20V 1A 3DFN	Details
DMN2550UFA-7B	Diodes Incorporated	MOSFET N-CH 20V 0.6A X2DFN-3	Details
DMN25D0UFA-7B	Diodes Incorporated	MOSFET N-CH 25V 0.24A 3DFN	Details