DMN2005UFG-7

DMN2005UFG-7 - Diodes Incorporated

Part Number
DMN2005UFG-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 20V 18.1A POWERDI-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN2005UFG-7 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
50000 pcs
Reference Price
USD 0.2567/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for DMN2005UFG-7

DMN2005UFG-7 Detailed Description

Part Number DMN2005UFG-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 18.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6495pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.05W (Ta)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 13.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerWDFN
Weight -
Country of Origin -

RELATED PRODUCTS FOR DMN2005UFG-7