DMG3415UFY4-7

DMG3415UFY4-7 - Diodes Incorporated

Part Number
DMG3415UFY4-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET P-CH 16V 2.5A DFN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMG3415UFY4-7 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
247705 pcs
Reference Price
USD 0.1035/pcs
Our Price
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DMG3415UFY4-7 Detailed Description

Part Number DMG3415UFY4-7
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 281.9pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Rds On (Max) @ Id, Vgs 39 mOhm @ 4A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2015H4-3
Package / Case 3-XFDFN
Weight -
Country of Origin -

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