C3M0120090D - Cree/Wolfspeed

Part Number	C3M0120090D
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	17.3nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 600V
Vgs (Max)	+18V, -8V
FET Feature	-
Power Dissipation (Max)	97W (Tc)
Rds On (Max) @ Id, Vgs	155 mOhm @ 15A, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

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