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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › NE85639-T1-R28-A
NE85639-T1-R28-A

NE85639-T1-R28-A - CEL

Part Number
NE85639-T1-R28-A
Manufacturer
CEL
Brief Description
SAME AS 2SC4093 NPN SILICON AMPL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NE85639-T1-R28-A PDF online browsing
Datasheet PDF Download
NE85639-T1-R28-A.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
3689 pcs
Reference Price
USD 0/pcs
Our Price
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NE85639-T1-R28-A Detailed Description

Part Number NE85639-T1-R28-A
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 13dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143
Weight -
Country of Origin -

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