AOWF412 - Alpha & Omega Semiconductor Inc.

Part Number	AOWF412
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta), 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	7V, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3220pF @ 50V
Vgs (Max)	±25V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs	15.8 mOhm @ 20A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

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AOW12N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO262	Details
AOW12N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 12A TO262	Details