AOT12N60_001 - Alpha & Omega Semiconductor Inc.

Part Number	AOT12N60_001
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 25V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AOT10B60D	Alpha & Omega Semiconductor Inc.	IGBT 600V 20A 163W TO220	Details
AOT10B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO220	Details
AOT10B65M2	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO220	Details
AOT10N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220	Details
AOT10N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO220	Details
AOT10N60_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220	Details
AOT10N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 10A TO220	Details
AOT10T60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220	Details
AOT10T60P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO220	Details
AOT10T60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220	Details