영상 |
부품 번호 |
제조사 | 기술 |
전망 |
|
VI10150C |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A |
세부 |
|
VI10150C-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 150V TO262 |
세부 |
|
VI10150C-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-262AA |
세부 |
|
VI10150CHM3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-262AA |
세부 |
|
VI10150S |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A |
세부 |
|
VI10150S-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 150V 10A TO262AA |
세부 |
|
VI10150S-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-262AA |
세부 |
|
VI10150SHM3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-262AA |
세부 |