| 영상 |
부품 번호 |
제조사 | 기술 |
전망 |
 |
VB40100C |
VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A |
세부 |
 |
VB40100C-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO263 |
세부 |
|
VB40100C-E3/8W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO263 |
세부 |
|
VB40100C-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 40A 100V TO-263AB |
세부 |
|
VB40100C-M3/8W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 40A 100V TO-263AB |
세부 |
 |
VB40100CHM3/I |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO263 |
세부 |
|
VB40100G |
VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A |
세부 |
|
VB40100G-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO263 |
세부 |
|
VB40100G-E3/8W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO263 |
세부 |
|
VB40120C |
VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A |
세부 |
