영상 |
부품 번호 |
제조사 | 기술 |
전망 |
|
V20120C |
VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A |
세부 |
|
V20120C-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 120V TO220 |
세부 |
|
V20120C-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 20A 120V TO-220AB |
세부 |
|
V20120CHM3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 20A 120V TO-220AB |
세부 |
|
V20120S |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A |
세부 |
|
V20120S-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 120V 20A TO220AB |
세부 |
|
V20120S-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 20A 120V TO-220AB |
세부 |
|
V20120SG |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A |
세부 |
|
V20120SG-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 120V 20A TO220AB |
세부 |
|
V20120SG-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 20A 120V TO-220AB |
세부 |