Immagine |
Numero di parte |
Produttori | Descrizione |
vista |
|
VI30100C |
VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A |
Dettagli |
|
VI30100C-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 100V TO262 |
Dettagli |
|
VI30100C-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 100V TO-262AA |
Dettagli |
|
VI30100CHM3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 100V TO-262AA |
Dettagli |
|
VI30100S |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A |
Dettagli |
|
VI30100S-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 30A TO262AA |
Dettagli |
|
VI30100S-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 100V TO-262AA |
Dettagli |
|
VI30100SG |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A |
Dettagli |
|
VI30100SG-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 30A TO262AA |
Dettagli |
|
VI30100SG-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 100V TO-262AA |
Dettagli |