KBU3510-G - Comchip Technology

Numero di parte	KBU3510-G
Stato parte	Active
Tipo diodo	Single Phase
Tecnologia	Standard
Voltage - Peak Reverse (Max)	1000V
Corrente - Rettificato medio (Io)	35A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 17.5A
Corrente - Perdita inversa @ Vr	10µA @ 1000V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto / caso	4-SIP, KBU
Pacchetto dispositivo fornitore	KBU
Peso	-
Paese d'origine	-

Numero di parte	Produttori	Descrizione	vista
KBU10005	GeneSiC Semiconductor	DIODE BRIDGE 50V 10A KBU	Dettagli
KBU10005-G	Comchip Technology	RECT BRIDGE CELL 50V 10A KBU	Dettagli
KBU1001	GeneSiC Semiconductor	DIODE BRIDGE 100V 10A KBU	Dettagli
KBU1001-G	Comchip Technology	RECTIFIER BRIDGE 10A 100V KBU	Dettagli
KBU1001G	TSC	Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers	Dettagli
KBU1001G T0	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 10A KBU	Dettagli
KBU1001G T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 10A KBU	Dettagli
KBU1001G_1	TSC	Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers	Dettagli
KBU1001_09	TSC	Single Phase 10.0 AMPS. Bridge Rectifiers	Dettagli
KBU1001_1	TSC	Single Phase 10 AMPS. Silicon Bridge Rectifiers	Dettagli