Immagine | Numero di parte | Produttori | Descrizione | vista |
---|---|---|---|---|
AT29LV512-12JU | Microchip Technology | IC FLASH 512K PARALLEL 32PLCC | Dettagli | |
IS61WV102416EDBLL-10T2LI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 16M PARALLEL 48TSOP | Dettagli | |
IS61WV102416EDBLL-10TLI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 16M PARALLEL 48TSOP | Dettagli | |
IS34MW04G084-TLI | ISSI, Integrated Silicon Solution Inc | IC FLASH 4G PARALLEL 48TSOP | Dettagli | |
MT41J256M16HA-093:E TR | Micron Technology Inc. | IC DRAM 4G PARALLEL 96FBGA | Dettagli | |
S70FL01GSDPMFI010 | Cypress Semiconductor Corp | IC FLASH 1G SPI 80MHZ 16SO | Dettagli | |
IS43DR82560C-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2G PARALLEL 60TWBGA | Dettagli | |
SM662GXA-ACS | Silicon Motion, Inc. | FERRI-EMMC BGA 100-B EMMC 5.0 ML | Dettagli | |
S70FL01GSAGMFB010 | Cypress Semiconductor Corp | IC NOR | Dettagli | |
CY14E256LA-SZ45XQ | Cypress Semiconductor Corp | IC NVSRAM 256K PARALLEL 32SOIC | Dettagli | |
S25FL128P0XMFI003 | Cypress Semiconductor Corp | IC FLASH 128M SPI 104MHZ 16SOIC | Dettagli | |
S34MS04G100TFI900 | Cypress Semiconductor Corp | IC FLASH 4G PARALLEL 48TSOP I | Dettagli | |
TH58BYG3S0HBAI6 | Toshiba Memory America, Inc. | 8GB SLC NAND 24NM BGA 6.5X8 1.8V | Dettagli | |
ECB440ABBCN-Y3 | Micron Technology Inc. | LPDDR2 4G DIE 128MX32 | Dettagli | |
S34ML08G101BHI003 | Cypress Semiconductor Corp | IC FLASH 8G PARALLEL 63BGA | Dettagli | |
S34ML04G200TFI003 | Cypress Semiconductor Corp | IC FLASH 4G PARALLEL 48TSOP I | Dettagli | |
S34ML02G100BHI003 | Cypress Semiconductor Corp | IC FLASH 2G PARALLEL 63BGA | Dettagli | |
S34ML04G100BHI003 | Cypress Semiconductor Corp | IC FLASH 4G PARALLEL 63BGA | Dettagli | |
IS61WV51216EEBLL-10T2LI | ISSI, Integrated Silicon Solution Inc | IC SRAM 8M PARALLEL 48TSOP I | Dettagli | |
S29GL01GT11TFV030 | Cypress Semiconductor Corp | IC 1 GB FLASH MEMORY | Dettagli |