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Casa › Produttori › Global Power Technologies Group
global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.
Dispositivi a semiconduttore discreti
Immagine Numero di parte Descrizione vista
GP2D024A065U GP2D024A065U DIODE SILICON CARBIDE Dettagli
GP3D050A060B GP3D050A060B DIODE SCHOTTKY 600V 50A TO247-2 Dettagli
GP3D060A120B GP3D060A120B DIODE SCHOTTKY 1200V 60A TO247 Dettagli
GP3D030A060B GP3D030A060B DIODE SCHOTTKY 600V 30A TO247 Dettagli
GP2D008A065A GP2D008A065A DIODE SILICON CARBIDE Dettagli
GP2D008A065C GP2D008A065C DIODE SILICON CARBIDE Dettagli
GP2D030A065B GP2D030A065B DIODE SILICON CARBIDE Dettagli
GP3D050A120B GP3D050A120B DIODE SCHOTTKY 1.2KV 50A TO247-2 Dettagli
GCMS020A120S1-E1 GCMS020A120S1-E1 SIC MOSFET/ SBD MODULE SOT-227 C Dettagli
GHIS200A120S3B1 GHIS200A120S3B1 SI IGBT & SIC SBD HYBRID MODULES Dettagli
GCMS040A120B1H1 GCMS040A120B1H1 SIC MOSFET FULL BRIDGE MODULE B1 Dettagli
GHIS030A060B2P2 GHIS030A060B2P2 SI IGBT & SIC SBD HYBRID MODULES Dettagli
GCMS040A120B3C1 GCMS040A120B3C1 SIC MOSFET 6-PACK MODULE B2_EASY Dettagli
GHIS080A120S1-E1 GHIS080A120S1-E1 SI IGBT/ SIC SBD HYBRID MODULE S Dettagli
GCMS007A120S7B1 GCMS007A120S7B1 SIC MOSFET/SBD HALF BRIDGE MODUL Dettagli
GSID150A120S6A4 GSID150A120S6A4 SILICON IGBT MODULES Dettagli
GSID600A120S4B1 GSID600A120S4B1 SILICON IGBT MODULES Dettagli
GSID300A125S5C1 GSID300A125S5C1 IGBT MODULE 1250V 600A CHASSIS Dettagli
GHIS030A120S-A2 GHIS030A120S-A2 IGBT BUCK CHOP 1200V 60A SOT227 Dettagli
GHIS040A060S-A1 GHIS040A060S-A1 IGBT BOOST CHOP 600V 80A SOT227 Dettagli
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