| Número de pieza | V10P6HM3_A/H |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 60V |
| Corriente - promedio rectificado (Io) | 10A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 590mV @ 10A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 1.9mA @ 60V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-277, 3-PowerDFN |
| Paquete de dispositivo del proveedor | TO-277A (SMPC) |
| Temperatura de funcionamiento - unión | -40°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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V10P10 | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
|
V10P10-E3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-E3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HM3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HM3/87A | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
|
V10P10HM3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 10A TO277A | Detalles |
