| Número de pieza | SQD50P08-28_GE3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | P-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 80V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 12.5A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 145nC @ 10V |
| Vgs (Max) | ±20V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 6035pF @ 25V |
| Característica FET | - |
| Disipación de potencia (Máx) | 136W (Tc) |
| Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | TO-252AA |
| Paquete / caja | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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,%20SC-63.jpg "SQD50N04-09H-GE3") |
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SQD50N04-4M5L_GE3 | Vishay Siliconix | MOSFET N-CH 40V 50A TO252AA | Detalles |
