| Número de pieza | SI4830CDY-T1-E3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 8A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 1mA |
| Carga de puerta (Qg) (Max) @ Vgs | 25nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 950pF @ 15V |
| Potencia - Max | 2.9W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SO |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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