| Número de pieza | SI4204DY-T1-GE3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 20V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 19.8A |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 10A, 10V |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 45nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 2110pF @ 10V |
| Potencia - Max | 3.25W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SO |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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SI4200-BM | Silicon Labs | IC RF TXRX CELLULAR 32-VFQFN | Detalles |
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SI4200-BMR | SILICON | SI4200-BMR SILICON VQFN-3.. New Original Stocks | Detalles |
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SI4200-EVB | Silicon Labs | BOARD EVAL FOR SI4200 | Detalles |
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SI4200-GM | Silicon Labs | IC RF TXRX CELLULAR 32-VFQFN | Detalles |
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SI4200BM | ORIGINAL | SI4200BM ORIGINAL SMD or Through Hole New Original Stocks | Detalles |
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SI4200DB-BM | SILICON | SI4200DB-BM SILICON QFN New Original Stocks | Detalles |
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SI4200DB-BRM | SAGEM | SI4200DB-BRM SAGEM SMD or Through Hole New Original Stocks | Detalles |
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SI4200DY | VIS | SI4200DY VIS SO-8 New Original Stocks | Detalles |
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SI4200DY-T1-E3 | VISHAY | SI4200DY-T1-E3 VISHAY SOP8 New Original Stocks | Detalles |
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SI4200DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC | Detalles |
