| Número de pieza | SE40PB-M3/86A |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 2.4A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.05V @ 2A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 2.2µs |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Capacitancia @ Vr, F | 28pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-277, 3-PowerDFN |
| Paquete de dispositivo del proveedor | TO-277A (SMPC) |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
SE40PB-M3/86A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PB-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PBHM3/86A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PBHM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PBHM3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PBHM3_A/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.4A TO277A | Detalles |
|
SE40PD-M3/86A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2.4A TO277A | Detalles |
|
SE40PD-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2.4A TO277A | Detalles |
|
SE40PDHM3/86A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2.4A TO277A | Detalles |
|
SE40PDHM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2.4A TO277A | Detalles |
