| Número de pieza | FESB8ATHE3/81 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 50V |
| Corriente - promedio rectificado (Io) | 8A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 950mV @ 8A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 10µA @ 50V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paquete de dispositivo del proveedor | TO-263AB |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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FESB8 | GE | FAST EFFICIENT PLASTIC RECTIFIER | Detalles |
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FESB8AT | VIS | FESB8AT VIS TO-263 New Original Stocks | Detalles |
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FESB8AT-E3/81 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 8A TO263AB | Detalles |
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FESB8ATHE3/81 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 8A TO263AB | Detalles |
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FESB8BT | GE | FAST EFFICIENT PLASTIC RECTIFIER | Detalles |
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FESB8BT-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 8A TO263AB | Detalles |
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FESB8BT-E3/81 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 8A TO263AB | Detalles |
|
FESB8BTHE3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 8A TO263AB | Detalles |
|
FESB8BTHE3/81 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 8A TO263AB | Detalles |
|
FESB8CT | GE | FAST EFFICIENT PLASTIC RECTIFIER | Detalles |
