| Número de pieza | EGL34DHE3_A/H |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 200V |
| Corriente - promedio rectificado (Io) | 500mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 500mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitancia @ Vr, F | 7pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-213AA (Glass) |
| Paquete de dispositivo del proveedor | DO-213AA (GL34) |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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EGL34A | GS | EGL34A GS LL34 New Original Stocks | Detalles |
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EGL34A-E3/83 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34A-E3/98 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34AHE3/83 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34AHE3/98 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34AHE3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34AHE3_A/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 500MA DO213AA | Detalles |
|
EGL34A_07 | SEMIKRON | Surface mount diode Ultrafast silicon rectifier diodes | Detalles |
|
EGL34B | VISHAY | Surface Mount Glass Passivated Ultrafast Rectifier | Detalles |
|
EGL34B-E3/83 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 500MA DO213 | Detalles |
